INTRINSIC POINT-DEFECTS IN DISLOCATION-FREE SILICON-CRYSTALS HEAVILY DOPED WITH ARSENIC

被引：0

作者：

ANASTASEVA, NA

BUBLIK, VT

MOROZOV, AN

TROKINA, OY

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1985年 / 19卷 / 03期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：294 / 297

页数：4

共 17 条

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[2] INTERSTITIAL VERSUS SUBSTITUTIONAL OXYGEN IN SILICON [J].

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[3]

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[4] EFFECT OF IMPURITY PRECIPITATIONS ON ANOMALOUS X-RAY TRANSMISSION IN HEAVILY ARSENIC-DOPED GERMANIUM [J].

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DATSENKO, LI .

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[5]

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FISTUL VI, 1977, PRECIPITATION SUPERS

[7]

Frank W., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P31

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Kroger F A., 1964, CHEM IMPERFECT CRYST

[9]

MILVIDSKII MG, 1984, STRUCTURE DEFECTS SE

[10]

Morozov A. N., 1982, Soviet Physics - Solid State, V24, P1229

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