ZNSE-GAAS AND SE-GAAS INTERFACES

被引:74
作者
TU, DW
KAHN, A
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期
关键词
D O I
10.1116/1.573350
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:922 / 925
页数:4
相关论文
共 20 条
[1]   SURFACE-REACTIONS AND INTERDIFFUSION [J].
BACHRACH, RZ ;
BAUER, RS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1149-1153
[2]   SURFACE PROCESSES CONTROLLING MBE HETEROJUNCTION FORMATION - GAAS(100)/GE INTERFACES [J].
BAUER, RS ;
MIKKELSEN, JC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :491-497
[3]   GE-GAAS(110) INTERFACE FORMATION [J].
BAUER, RS ;
MCMENAMIN, JC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1444-1449
[4]  
Burylev B. P., 1977, IAN SSSR NEORG MATER, V13, P919
[5]   COMPOSITION AND STRUCTURE OF DIFFERENTLY PREPARED GAAS(100) SURFACES STUDIED BY LEED AND AES [J].
DRATHEN, P ;
RANKE, W ;
JACOBI, K .
SURFACE SCIENCE, 1978, 77 (01) :L162-L166
[6]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF CDTE-FILMS ON INSB [J].
FARROW, RFC ;
NOREIKA, AJ ;
SHIRLAND, FA ;
TAKEI, WJ ;
FRANCOMBE, MH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :211-211
[7]   MEASUREMENT OF ZNSE-GAAS(110) AND ZNSE-GE(110) HETEROJUNCTION BAND DISCONTINUITIES BY X-RAY PHOTO-ELECTRON SPECTROSCOPY (XPS) [J].
KOWALCZYK, SP ;
KRAUT, EA ;
WALDROP, JR ;
GRANT, RW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :482-485
[8]   BAND DISCONTINUITIES AND INTERFACE FERMI-LEVEL POSITIONS IN GE-GAAS(110) HETEROJUNCTIONS [J].
KOWALCZYK, SP ;
GRANT, RW ;
WALDROP, JR ;
KRAUT, EA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :684-686
[9]  
LAPEYRE GJ, 1975, PHYS REV LETT, V34, P1624
[10]   ELECTRONIC SURFACE STATES ON CLEAN AND OXYGEN-EXPOSED GAAS SURFACES [J].
LUDEKE, R ;
KOMA, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :241-247