THE DEPENDENCE OF LIGHT-INTENSITY ON SURFACE-MORPHOLOGY AND IMPURITY INCORPORATION FOR ZNSE GROWN BY PHOTO-ASSISTED MOVPE

被引：39
作者：
YASUDA, T
KOYAMA, Y
WAKITANI, J
YOSHINO, J
KUKIMOTO, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 09期
关键词：
D O I：
10.1143/JJAP.28.L1628
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L1628 / L1630
页数：3
相关论文
共 6 条
[1]   GROWTH AND PROPERTIES OF UNDOPED N-TYPE ZNSE BY LOW-TEMPERATURE AND LOW-PRESSURE OMVPE [J].
FUJITA, S ;
MATSUDA, Y ;
SASAKI, A .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06) :L360-L362
[2]   GAS-PHASE AND SURFACE-REACTIONS IN XENON LAMP-ASSISTED ORGANOMETALLIC VAPOR-PHASE EPITAXY OF ZNSE [J].
FUJITA, S ;
TAKEUCHI, FY ;
FUJITA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11) :L2019-L2021
[3]   INVESTIGATIONS OF PHOTO-ASSOCIATION MECHANISM FOR GROWTH-RATE ENHANCEMENT IN PHOTO-ASSISTED OMVPE OF ZNSE AND ZNS [J].
FUJITA, S ;
TANABE, A ;
SAKAMOTO, T ;
ISEMURA, M ;
FUJITA, S .
JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :259-264
[4]   GROWTH-RATE ENHANCEMENT BY XENON LAMP IRRADIATION IN ORGANOMETALLIC VAPOR-PHASE EPITAXY OF ZNSE [J].
FUJITA, S ;
TANABE, A ;
SAKAMOTO, T ;
ISEMURA, M ;
FUJITA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (12) :L2000-L2002
[5]  
HOSHIKAWA A, 1984, JPN J APPL PHYS, V23, pL773
[6]   SELECTIVE AREA CONTROL OF MATERIAL PROPERTIES IN LASER-ASSISTED MOVPE OF GAAS AND ALGAAS [J].
KUKIMOTO, H ;
BAN, Y ;
KOMATSU, H ;
TAKECHI, M ;
ISHIZAKI, M .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :223-228
1