GROWTH-CHARACTERISTICS OF GAAS-GA1-XALXAS STRUCTURES FABRICATED BY LIQUID-PHASE EPITAXY OVER PREFERENTIALLY ETCHED CHANNELS

被引：62
作者：
BOTEZ, D
TSANG, WT
WANG, S
机构：
[1] UNIV CALIF, DEPT ELECT ENGN & COMP SCI, BERKELEY, CA 94720 USA
[2] UNIV CALIF, ELECTR RES LAB, BERKELEY, CA 94720 USA
来源：
APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 04期
关键词：
D O I：
10.1063/1.88710
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：234 / 237
页数：4
相关论文
共 15 条
[1]   OPTICAL STRIPLINES FOR INTEGRATED OPTICAL CIRCUITS IN EPITAXIAL GAAS [J].
BLUM, FA ;
SHAW, DW ;
HOLTON, WC .
APPLIED PHYSICS LETTERS, 1974, 25 (02) :116-118
[2]   PROTON-BOMBARDMENT FORMATION OF STRIPE-GEOMETRY HETEROSTRUCTURE LASERS FOR 300 K CW OPERATION [J].
DYMENT, JC ;
NORTH, JC ;
MILLER, BI ;
RIPPER, JE ;
DASARO, LA .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (06) :726-&
[3]   DIFFUSED 2-DIMENSIONAL OPTICAL-WAVEGUIDES IN GAAS [J].
GARMIRE, E ;
LOVELACE, DF ;
THOMPSON, GHB .
APPLIED PHYSICS LETTERS, 1975, 26 (06) :329-331
[4]  
HSIEH JJ, 1974, J CRYST GROWTH, V27, P49, DOI 10.1016/S0022-0248(74)80049-7
[5]   SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM [J].
LIDA, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) :768-&
[6]   OPTICAL WAVEGUIDES IN GAAS-AIGAAS EPITAXIAL LAYERS [J].
LOGAN, RA ;
REINHART, FK .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4172-4176
[7]   SURVEY OF INTEGRATED OPTICS [J].
MILLER, SE .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1972, QE 8 (02) :199-+
[8]   COMPARISON OF THEORY AND EXPERIMENT FOR LPE LAYER THICKNESS OF GAAS AND GAAS ALLOYS [J].
MOON, RL ;
KINOSHITA, J .
JOURNAL OF CRYSTAL GROWTH, 1974, 21 (01) :149-154
[9]   UNIVERSAL STAIN-ETCHANT FOR INTERFACES IN III-V COMPOUNDS [J].
OLSEN, GH ;
ETTENBERG, M .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) :5112-5114
[10]   TRANSMISSION PROPERTIES OF RIB WAVEGUIDES FORMED BY ANODIZATION OF EPITAXIAL GAAS ON ALXGA1-X AS LAYERS [J].
REINHART, FK ;
LOGAN, RA .
APPLIED PHYSICS LETTERS, 1974, 24 (06) :270-272
12