PROPERTIES OF AMORPHOUS SI-H FILMS PREPARED BY DUAL ION-BEAM SPUTTERING

被引：1
|
作者：
RUDOLF, P
COLUZZA, C
MARIUCCI, L
FROVA, A
机构：
来源：
PHYSICA SCRIPTA | 1988年 / 37卷 / 05期
关键词：
D O I：
10.1088/0031-8949/37/5/033
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：828 / 830
页数：3
相关论文
共 50 条
  • [1] ELECTRICAL-PROPERTIES OF OXYGENATED AMORPHOUS-SI PREPARED BY ION-BEAM SPUTTERING
    ISHII, K
    NAOE, M
    YAMANAKA, S
    OKANO, S
    SUZUKI, M
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (07) : 1395 - 1396
  • [2] DEPOSITION AND CHARACTERIZATION OF A-SI-H FILMS PREPARED BY REACTIVE ION-BEAM SPUTTERING
    BHAN, MK
    KASHYAP, SC
    MALHOTRA, LK
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1988, 101 (01) : 111 - 116
  • [3] Magnetic properties of amorphous iron nitride films by ion-beam sputtering
    Dubey, R
    Gupta, A
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (08)
  • [4] CHARACTERIZATION OF SI-N FILMS PREPARED BY REACTIVE ION-BEAM SPUTTERING
    AGGARWAL, MD
    ASHOK, S
    FONASH, SJ
    JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (03) : 491 - 504
  • [5] MAGNETIC-PROPERTIES OF COZR AMORPHOUS FILMS PREPARED BY LOW-ENERGY ION-BEAM SPUTTERING
    TOSHIMA, T
    TAGO, A
    NISHIMURA, C
    IEEE TRANSACTIONS ON MAGNETICS, 1986, 22 (05) : 1110 - 1112
  • [6] PERPENDICULAR ANISOTROPY IN RARE EARTH-TRANSITION METAL AMORPHOUS FILMS PREPARED BY DUAL ION-BEAM SPUTTERING
    OKAMINE, S
    OHTA, N
    SUGITA, Y
    IEEE TRANSACTIONS ON MAGNETICS, 1985, 21 (05) : 1641 - 1643
  • [7] STRUCTURE OF MGO FILMS PREPARED BY ION-BEAM SPUTTERING
    ISHIHARA, T
    MOTOYAMA, M
    NIPPON SERAMIKKUSU KYOKAI GAKUJUTSU RONBUNSHI-JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 1989, 97 (08): : 771 - 777
  • [8] CNx/TiNy films prepared by ion-beam sputtering
    D. L. Yu
    J. L. He
    S. M. Liu
    D. C. Li
    Y. J. Tian
    O. Yanagisawa
    Journal of Materials Science, 2003, 38 : 1471 - 1477
  • [9] CNx/TiNy films prepared by ion-beam sputtering
    Yu, DL
    He, JL
    Liu, SM
    Li, DC
    Tian, YJ
    Yanagisawa, O
    JOURNAL OF MATERIALS SCIENCE, 2003, 38 (07) : 1471 - 1477
  • [10] ELECTRICAL AND OPTICAL-PROPERTIES OF HYDROGENATED AMORPHOUS SILICON-GERMANIUM (A-SI1-XGEX-H) FILMS PREPARED BY REACTIVE ION-BEAM SPUTTERING
    BHAN, MK
    MALHOTRA, LK
    KASHYAP, SC
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (06) : 2528 - 2537
12345