LOCAL-STRUCTURE AROUND ZN ATOMS DIFFUSED INTO THE GAAS CRYSTAL

被引:3
作者
KITANO, T
MATSUMOTO, Y
MATSUI, J
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D O I
10.1063/1.99986
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O59 [应用物理学];
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页码:1390 / 1392
页数:3
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共 14 条
[1]   DIFFUSION MECHANISM OF ZN IN GAAS + GAP BASED ON ISOCONCENTRATION DIFFUSION EXPERIMENTS [J].
CHANG, LL ;
PEARSON, GL .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) :1960-&
[2]   DIFFUSION OF ZINC IN GALLIUM ARSENIDE [J].
CUNNELL, FA ;
GOOCH, CH .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) :127-133
[3]   IR-RED GAAS-ALAS SUPER-LATTICE LASER MONOLITHICALLY INTEGRATED IN A YELLOW-GAP CAVITY [J].
HOLONYAK, N ;
LAIDIG, WD ;
CAMRAS, MD ;
COLEMAN, JJ ;
DAPKUS, PD .
APPLIED PHYSICS LETTERS, 1981, 39 (01) :102-104
[4]  
KITANO T, 1988, 5TH C SEM 3 5 MAT MA
[5]  
LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159
[6]   DIFFUSION AND INTERDIFFUSION IN ZN-DISORDERED ALAS-GAAS SUPER-LATTICES [J].
LEE, JW ;
LAIDIG, WD .
JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (01) :147-165
[7]   RAPID ZINC DIFFUSION IN GALLIUM ARSENIDE [J].
LONGINI, RL .
SOLID-STATE ELECTRONICS, 1962, 5 (MAY-J) :127-130
[8]   STUDY ON ZN DIFFUSION IN GAAS AND ALXGA1-XAS(X LESS-THAN-OR-EQUAL-TO 0.4) AT TEMPERATURES FROM 726-DEGREES-C TO 566-DEGREES-C [J].
MATSUMOTO, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (05) :829-835
[9]   NEW TECHNIQUE FOR INVESTIGATING NONCRYSTALLINE STRUCTURES - FOURIER ANALYSIS OF EXTENDED X-RAY - ABSORPTION FINE STRUCTURE [J].
SAYERS, DE ;
STERN, EA ;
LYTLE, FW .
PHYSICAL REVIEW LETTERS, 1971, 27 (18) :1204-&
[10]   EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE TECHNIQUE .3. DETERMINATION OF PHYSICAL PARAMETERS [J].
STERN, EA ;
SAYERS, DE ;
LYTLE, FW .
PHYSICAL REVIEW B, 1975, 11 (12) :4836-4846