ANNEALING CHARACTERISTICS OF BORON-IMPLANTED AND PHOSPHORUS-IMPLANTED POLYCRYSTALLINE SILICON

被引：11

作者：

SETO, JYW ^{[1
]}

机构：

[1] GM CORP,CTR TECH,DEPT ELECTR,RES LABS,WARREN,MI 48090

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 12期

关键词：

D O I：

10.1063/1.322588

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5167 / 5170

页数：4

共 50 条

[21] PROFILES AND ANNEALING OF THERMALLY GENERATED ELECTRON TRAPS IN BORON-IMPLANTED PHOSPHORUS-DOPED SILICON
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[22] GRAIN-GROWTH MECHANISM OF HEAVILY PHOSPHORUS-IMPLANTED POLYCRYSTALLINE SILICON
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[23] DISLOCATION NETWORKS IN PHOSPHORUS-IMPLANTED SILICON
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[24] SECONDARY DEFECTS IN PHOSPHORUS-IMPLANTED SILICON
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[25] CORROSION BEHAVIOR OF BORON-IMPLANTED AND PHOSPHORUS-IMPLANTED FE-40CR ALLOY IN REDUCING ACID-SOLUTIONS
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[28] CO2-LASER ANNEALING CHARACTERISTICS OF HIGH-DOSE BORON-IMPLANTED AND ARSENIC-IMPLANTED SILICON
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[29] REVERSE ANNEALING AND LOW-TEMPERATURE DIFFUSION OF BORON IN BORON-IMPLANTED SILICON
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[30] DEFECT CENTERS IN BORON-IMPLANTED SILICON
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