ANNEALING CHARACTERISTICS OF BORON-IMPLANTED AND PHOSPHORUS-IMPLANTED POLYCRYSTALLINE SILICON

被引：11

作者：

SETO, JYW ^{[1
]}

机构：

[1] GM CORP,CTR TECH,DEPT ELECTR,RES LABS,WARREN,MI 48090

来源：

关键词：

D O I：

10.1063/1.322588

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5167 / 5170

页数：4

共 17 条

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Sedgwick, T.O.
[J]. 1600, (119):
[3] CROWDER BL, 1972, ION IMPLANTATION SEM
[4] DEARNALEY G., 1973, ION IMPLANTATION
[5] Eisen FH, 1971, ION IMPLANTATION
[6] SILICON GATE TECHNOLOGY
FAGGIN, F
KLEIN, T
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (08) : 1125 - &
[7] HALSOR JL, 1972, IEEE T ELECTRON DEVI, V19, P1199
[8] HASIGUTI RR, 1968, LATTICE DAMAGE SEMIC
[9] POLYCRYSTALLINE SILICON RESISTORS FOR INTEGRATED-CIRCUITS
KING, FD
SHEWCHUN, J
THOMPSON, DA
BARBER, HD
PIECZONKA, WA
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (06) : 701 - +
[10] ION IMPLANTATION COMBINED WITH SILICON-GATE TECHNOLOGY
MAI, CC
HSWE, M
PALMER, RB
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (11) : 1219 - &