RECTIFICATION PROPERTIES OF CDS SCHOTTKY-BARRIER DIODES WITH EVAPORATED AU-TI AS BLOCKING CONTACT

被引：10

作者：

PANDE, KP ^{[1
]}

机构：

[1] UNIV DURHAM,DEPT APPL PHYS & ELECTR,DURHAM DH1 3LE,ENGLAND

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 42卷 / 02期

关键词：

D O I：

10.1002/pssa.2210420225

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：615 / 619

页数：5

共 15 条

[1] INTERFACE STATE DENSITY IN AU-NGAAS SCHOTTKY DIODES [J].

BORREGO, JM ;

GUTMANN, RJ ;

ASHOK, S .

SOLID-STATE ELECTRONICS, 1977, 20 (02) :125-132

[2] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+

[3] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J].

CHANG, CY ;

FANG, YK ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1971, 14 (07) :541-&

[4] INVESTIGATIONS ON EVAPORATED TE-CDS THIN-FILM DIODES [J].

DEPPE, HR ;

SCHRADER, L ;

KASSING, R .

THIN SOLID FILMS, 1975, 27 (02) :287-295

[5] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J].

GOODMAN, AM .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :329-&

[6] EVAPORATED METALLIC CONTACTS TO CONDUCTING CADMIUM SULFIDE SINGLE CRYSTALS [J].

GOODMAN, AM .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) :573-&

[7]

KOHLER P, 1971, SOLID ST ELECTRON, V14, P581

[8] INTERFACE PROPERTIES AND SCHOTTKY BARRIERS ON POLAR SURFACES OF CDS [J].

KUSAKA, M ;

MATSUI, T ;

OKAZAKI, S .

SURFACE SCIENCE, 1974, 41 (02) :607-610

[9] EFFECT OF CHEMISORBED OXYGEN ON AU, CU-CDS BARRIER HEIGHT [J].

MCCARTHY, SJ ;

YEE, SS .

SOLID-STATE ELECTRONICS, 1973, 16 (12) :1435-1439

[10] PROPERTIES OF INTERSURFACE IN AU-INSULATOR-CDS MEASURED BY CAPACITANCE METHOD [J].

OKAZAKI, S ;

OTAKI, E .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (02) :181-&

← 1 2 →