GROWTH OF HIGH-PURITY AIN CRYSTALS

被引：388
作者：
SLACK, GA [1 ]
MCNELLY, TF [1 ]
机构：
[1] GEN ELECTRIC RES & DEV CTR, SCHENECTADY, NY 12301 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 1976年 / 34卷 / 02期
关键词：
D O I：
10.1016/0022-0248(76)90139-1
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：263 / 279
页数：17
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