FREQUENCY DEPENDENCE OF IMPEDANCE OF DISTRIBUTED SURFACE STATES IN MOS STRUCTURES (SI-SIO2 T)

被引：130
作者：
LEHOVEC, K
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来源：
APPLIED PHYSICS LETTERS | 1966年 / 8卷 / 02期
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D O I：
10.1063/1.1754476
中图分类号：
O59 [应用物理学];
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页码：48 / &
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