INVESTIGATION OF THE CHARGE OBSERVED IN THERMAL OXIDE-FILMS ORIGINATING FROM SC-1 PRECLEANING

被引：8

作者：

KATO, J

MARUO, Y

机构：

[1] Seiko-Epson Corporation, Fujimi Plant, Suwa-Gun, Nagano-Ken, 218 Fujimi, Fujimi-Machi

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1992年 / 139卷 / 06期

关键词：

D O I：

10.1149/1.2069489

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The depth profiles of charge and Fe or Al impurities in thermal oxide films associated with ammonium hydroxide-hydrogen peroxide (SC-1) precleaning are reported. This study shows that negative charge in the silicon thermal oxide films is due to the existence of aluminum, which is incorporated during the SC-1 precleaning, in the surface region of silicon thermal oxide films.

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页码：1756 / 1759

页数：4

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