STRUCTURAL-CHANGES PRODUCED IN SILICON BY INTENSE 1-MU-M PS PULSES

被引：19
作者：
SMIRL, AL
BOYD, IW
BOGGESS, TF
MOSS, SC
VANDRIEL, HM
机构：
[1] N TEXAS STATE UNIV,CTR APPL QUANTUM ELECTR,DENTON,TX 76203
[2] UNIV TORONTO,DEPT PHYS,TORONTO M5S 1A1,ONTARIO,CANADA
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 03期
关键词：
D O I：
10.1063/1.337362
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1169 / 1182
页数：14
相关论文
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