HIGH-RESISTIVITY INGAAS(FE) GROWN BY A LIQUID-PHASE EPITAXIAL SUBSTRATE-TRANSFER TECHNIQUE

被引:12
作者
GROVES, SH
DIADIUK, V
PLONKO, MC
HOVEY, DL
机构
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D O I
10.1063/1.95803
中图分类号
O59 [应用物理学];
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页码:78 / 80
页数:3
相关论文
共 9 条
[1]   PREVENTION OF INP SURFACE DECOMPOSITION IN LIQUID-PHASE EPITAXIAL-GROWTH [J].
ANTYPAS, GA .
APPLIED PHYSICS LETTERS, 1980, 37 (01) :64-65
[2]   LOW-NOISE GA0.47IN0.53 AS PHOTOCONDUCTIVE DETECTORS USING FE COMPENSATION [J].
CHEN, CY ;
CHI, GC .
APPLIED PHYSICS LETTERS, 1984, 45 (10) :1083-1085
[3]   SEMI-INSULATING IN0.53GA0.47AS BY FE DOPING [J].
CLAWSON, AR ;
MULLIN, DP ;
ELDER, DI ;
WIEDER, HH .
JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) :90-95
[4]  
DIADIUK V, 1985, APPL PHYS LETT, V46
[5]   LPE GROWTH AND CHARACTERIZATION OF INP PHOTODIODES [J].
GROVES, SH ;
PLONKO, MC ;
ARMIENTO, CA ;
DIADIUK, V .
JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) :83-89
[6]  
LONG JA, UNPUB J CRYST GROWTH
[7]  
PUTLEY EH, 1960, HALL EFFECT RELATED, P115
[8]   ACCUMULATION MODE GA0.47IN0.53AS INSULATED GATE FIELD-EFFECT TRANSISTORS [J].
WIEDER, HH ;
VETERAN, JL ;
CLAWSON, AR ;
MULLIN, DP .
APPLIED PHYSICS LETTERS, 1983, 43 (03) :287-289
[9]  
1983, ADA140027, P14