Thin film Indium Tin Oxide acetone sensor

被引：0
作者：
Pandya, H. J. [1 ]
机构：
[1] Invertis Inst Engn & Technol, Dept Elect & Commun Engn, Bareilly Lucknow Highway 24, Bareilly 243123, Uttar Pradesh, India
来源：
INTERNATIONAL JOURNAL OF SIGNAL AND IMAGING SYSTEMS ENGINEERING | 2009年 / 2卷 / 1-2期
关键词：
semiconductor gas sensor; acetone; catalytic layer; VOC; volatile organic compound; ITO; indium tin oxide;
D O I：
10.1504/IJSISE.2009.029331
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Indium Tin Oxide (ITO) thin films have been grown on glass substrates using a direct evaporation method. After deposition, two gold pads were added on the top to make electrical contact to the sensing film. The operating temperature of the sensor was optimised at 673 K and exposed to acetone vapour in air (200-1000 ppm). Furthermore, the response of the film with an added catalytic layer was investigated. It was observed that the catalytic layer increased the sensitivity (S) from 0.8 to 0.9 as calculated from the formula S = (R-air - R-gas)/R-gas. Also, the selectivity of thin film sensors to acetone vapour was 0.9 when compared with 0.6, 0.5 and 0.4 for methanol, butanol and ethanol vapour, respectively.
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页码：66 / 69
页数：4
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