INTERNAL Q-SWITCHING IN SEMICONDUCTOR-LASERS - HIGH-INTENSITY PULSES OF THE PICOSECOND RANGE AND THE SPECTRAL PECULIARITIES

被引:14
作者
VAINSHTEIN, S
ROSSIN, VV
KILPELA, A
KOSTAMOVAARA, J
MYLLYLA, R
MAATTA, K
机构
[1] UNIV OULU,OULU,FINLAND
[2] TECH RES CTR FINLAND,ELECTR LAB,HELSINKI,FINLAND
关键词
D O I
10.1109/3.387037
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Optical pulses of similar to 100 ps duration, and similar to 10(2) W power were obtained from the industrial single heterostructure lasers with a standard pulse generation power of similar to 10 W in the internal Q-switching mode. Temporal and spectral analyses allow three components to be distinguished in the laser optical pulses: ordinary delayed pulses of large duration at energies considerably lower than the energy gap, short optical pulses caused by the gain-switching effect at higher energies, and short optical pulses at the end of the current pulse (Q-switching mode) at the highest energies. A model is proposed involving band tail states as a saturable absorber causing large delays.
引用
收藏
页码:1015 / 1021
页数:7
相关论文
共 19 条
[1]  
ADAMS MJ, 1973, J QUANTUM ELECTRON, V9, P328
[2]  
DOBSON CD, 1968, J QUANTUM ELECTRON, V4, P151
[3]   MEASUREMENT AND INTERPRETATION OF LONG SPONTANEOUS LIFETIMES IN DOUBLE HETEROSTRUCTURE LASERS [J].
DYMENT, JC ;
LEE, TP ;
RIPPER, JE .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) :452-+
[4]  
DYMENT JC, 1968, J QUANTUM ELECTRON, V4, P155
[5]  
FENNER GE, 1967, J QUANTUM ELECTRON, V10, P753
[6]   POWER DRIFT STEP RECOVERY DIODES (DSRD) [J].
GREKHOV, IV ;
EFANOV, VM ;
KARDOSYSOEV, AF ;
SHENDEREY, SV .
SOLID-STATE ELECTRONICS, 1985, 28 (06) :597-599
[7]  
GRUNDORFER S, 1973, J QUANTUM ELECTRON, V9, P814
[8]  
KILPELA A, 1993, SPIE P INT APPLICATI, V1821, P365
[10]  
KOSTAMOVAARA J, 1992, SPIE P LASER RADAR 7, V1633, P114