THE EFFECT OF INDIUM ON THE ELECTRONIC-PROPERTIES OF ARSENIC TRISELENIDE

被引：2
|
作者：
BARCLAY, RP
机构：
[1] Dept. of Mater. Eng., Univ. Coll. of Swansea
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 1994年 / 6卷 / 37期
关键词：
D O I：
10.1088/0953-8984/6/37/002
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A preliminary investigation of the effects of doping arsenic triselenide with indium was carried out. Measurements of DC conductivity, photomobility and optical absorption were performed. We find a significant improvement in the main transport properties. The findings are explained in terms of a shift of the valence band edge towards the centre of the mobility gap as a function of doping rather than a shift of the Fermi level towards the band edge.
引用
收藏
页码：L549 / L552
页数：4
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