NICKEL-ENHANCED SOLID-PHASE EPITAXIAL REGROWTH OF AMORPHOUS-SILICON

被引：15

作者：

MOHADJERI, B ^{[1
]}

LINNROS, J ^{[1
]}

SVENSSON, BG ^{[1
]}

OSTLING, M ^{[1
]}

机构：

[1] ROYAL INST TECHNOL, POB 1298, S-16428 KISTA, SWEDEN

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.68.1872

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Low-temperature solid-phase epitaxial regrowth of amorphous silicon (a-Si) is reported for an ion-amorphized Ni/Si structure. The epitaxial regrowth follows after monosilicide formation upon heating to only 425-degrees-C, as evidenced by Rutherford backscattering and channeling measurements and transmission electron microscopy. The regrowth rate of the a-Si layer (thickness approximately 600 angstrom) is enhanced by more than a factor of 300 compared with ordinary solid-phase epitaxy of ion-implanted a-Si. This is attributed to results from redistribution of Ni towards the a-Si/c-Si interface, as shown by secondary ion mass spectrometry, where the presence of Ni, or Ni-silicide nuclei, enhances the solid-phase epitaxy.

引用

收藏

页码：1872 / 1875

页数：4

相关论文

共 50 条

[31] HIGH-PRESSURE STUDY OF SOLID-PHASE EPITAXIAL REGROWTH IN IMPLANTED AMORPHOUS GAAS [J].

LICOPPE, C ;

SAVARY, H .

APPLIED PHYSICS LETTERS, 1987, 51 (10) :740-742

[32] THE INFLUENCE OF THE STRUCTURE OF AMORPHOUS-SILICON DEPOSITED IN ULTRAHIGH-VACUUM ON THE SOLID-PHASE EPITAXIAL-GROWTH RATE [J].

KAVERINA, IG ;

KOROBTSOV, VV ;

LIFSHITS, VG ;

ZAVODINSKII, VG ;

ZOTOV, AV .

THIN SOLID FILMS, 1984, 117 (02) :101-106

[33] TRANSIENT KINETICS IN SOLID-PHASE EPITAXY OF NI DOPED AMORPHOUS-SILICON [J].

KUZNETSOV, AY ;

SVENSSON, BG .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (1-2) :261-264

[34] ERBIUM IN CRYSTAL SILICON - SEGREGATION AND TRAPPING DURING SOLID-PHASE EPITAXY OF AMORPHOUS-SILICON [J].

CUSTER, JS ;

POLMAN, A ;

VANPINXTEREN, HM .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (06) :2809-2817

[35] PRECISION-MEASUREMENTS OF THE EFFECT OF IMPLANTED BORON ON SILICON SOLID-PHASE EPITAXIAL REGROWTH [J].

PARK, WW ;

BECKER, MF ;

WALSER, RM .

JOURNAL OF MATERIALS RESEARCH, 1988, 3 (02) :298-308

[36] THE INFLUENCE OF HIGH IMPLANT CONCENTRATION ON SOLID-PHASE EPITAXIAL REGROWTH IN (100) AND (111) SILICON [J].

WILLIAMS, JS ;

CHRISTODOULIDES, CE ;

GRANT, WA .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4) :157-160

[37] Solid-phase epitaxial regrowth of phosphorus-doped silicon by nanosecond laser annealing [J].

Kerdiles, S. ;

Opprecht, M. ;

Bosch, D. ;

Ribotta, M. ;

Sklenard, B. ;

Brunet, L. ;

Michalowski, P. P. .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2025, 186

[38] Revisiting the role of strain in solid-phase epitaxial regrowth of ion-implanted silicon [J].

Hu, Kuan-Kan ;

Liang, Shin-Yang ;

Woon, Wei Yen .

APPLIED PHYSICS EXPRESS, 2015, 8 (02) :021302

[39] KINETICS OF LASER-INDUCED SOLID-PHASE EPITAXY IN AMORPHOUS-SILICON FILMS [J].

KOKOROWSKI, SA ;

OLSON, GL ;

HESS, LD .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :921-926

[40] MODE OF GROWTH AND MICROSTRUCTURE OF POLYCRYSTALLINE SILICON OBTAINED BY SOLID-PHASE CRYSTALLIZATION OF AN AMORPHOUS-SILICON FILM [J].

HAJI, L ;

JOUBERT, P ;

STOEMENOS, J ;

ECONOMOU, NA .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (08) :3944-3952

← 1 2 3 4 5 →