NICKEL-ENHANCED SOLID-PHASE EPITAXIAL REGROWTH OF AMORPHOUS-SILICON

被引：15

作者：

MOHADJERI, B ^{[1
]}

LINNROS, J ^{[1
]}

SVENSSON, BG ^{[1
]}

OSTLING, M ^{[1
]}

机构：

[1] ROYAL INST TECHNOL, POB 1298, S-16428 KISTA, SWEDEN

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.68.1872

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Low-temperature solid-phase epitaxial regrowth of amorphous silicon (a-Si) is reported for an ion-amorphized Ni/Si structure. The epitaxial regrowth follows after monosilicide formation upon heating to only 425-degrees-C, as evidenced by Rutherford backscattering and channeling measurements and transmission electron microscopy. The regrowth rate of the a-Si layer (thickness approximately 600 angstrom) is enhanced by more than a factor of 300 compared with ordinary solid-phase epitaxy of ion-implanted a-Si. This is attributed to results from redistribution of Ni towards the a-Si/c-Si interface, as shown by secondary ion mass spectrometry, where the presence of Ni, or Ni-silicide nuclei, enhances the solid-phase epitaxy.

引用

页码：1872 / 1875

页数：4

共 50 条

[21] E-BEAM INDUCED EPITAXIAL REGROWTH OF AMORPHOUS-SILICON
GRAF, V
ONTON, A
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 445 - 445
[22] AMORPHIZATION AND SOLID-PHASE EPITAXIAL REGROWTH OF THE SILICON OVERLAYER IN SIMOX STRUCTURES
STARKOV, VV
HEMMENT, PLF
VYATKIN, AF
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4) : 701 - 704
[23] Solid-phase epitaxial regrowth of fine-grain polycrystalline silicon
Sinke, W.
Saris, F. W.
Barbour, J. C.
Mayer, J. W.
JOURNAL OF MATERIALS RESEARCH, 1986, 1 (01) : 155 - 161
[24] ELECTRONIC EXCITATION MODEL FOR IMPURITY-ENHANCED SOLID-PHASE EPITAXY OF AMORPHOUS-SILICON
WAUTELET, M
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (08) : 685 - 686
[25] Nickel germanide formation via solid phase epitaxial regrowth of amorphous germanium
Johnson, B. C.
Leong, M.
Kandasamy, S.
Holland, A.
McCallum, J. C.
PROCEEDINGS OF 2010 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAND 2010), 2010, : 165 - 166
[26] DOMINANT INFLUENCE OF BEAM-INDUCED INTERFACE REARRANGEMENT ON SOLID-PHASE EPITAXIAL CRYSTALLIZATION OF AMORPHOUS-SILICON
WILLIAMS, JS
ELLIMAN, RG
BROWN, WL
SEIDEL, TE
PHYSICAL REVIEW LETTERS, 1985, 55 (14) : 1482 - 1485
[27] Study of the solid phase epitaxial regrowth of amorphous silicon utilizing differential reflectometry
Hagmann, D.R.
Xi, W.
Hummel, R.E.
Nuclear Instruments & Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1991, 59-60 (pt 1)
[28] EPITAXIAL REGROWTH OF HIGHLY DOPED AMORPHOUS-SILICON FILMS GROWN BY MBE
STREIT, D
METZGER, RA
ALLEN, FG
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 205 - 205
[29] CHARACTERISTICS OF THE MATERIAL IMPROVEMENT PROCESS FOR SILICON ON SAPPHIRE BY SOLID-PHASE EPITAXIAL REGROWTH
RICHMOND, ED
KNUDSON, AR
MAGEE, TJ
KAWAYOSHI, H
LEUNG, C
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 569 - 573
[30] SILICON TRIANGULAR BARRIER DIODES BY MBE USING SOLID-PHASE EPITAXIAL REGROWTH
STREIT, DC
ALLEN, FG
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) : 254 - 256

← 1 2 3 4 5 →