DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS

被引：61
作者：
ALPERIN, ME
HOLLAWAY, TC
HAKEN, RA
GOSMEYER, CD
KARNAUGH, RV
PARMANTIE, WD
机构：
[1] TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,BIPOLAR WATER FABRICAT GRP,DALLAS,TX 75265
[2] TEXAS INSTRUMENTS INC,VLSI LAB,DALLAS,TX 75265
[3] TEXAS INSTRUMENTS INC,SEMICOND PROC GRP,DALLAS,TX 75265
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1985年 / 20卷 / 01期
关键词：
D O I：
10.1109/JSSC.1985.1052277
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：61 / 69
页数：9
相关论文
共 50 条
  • [21] THERMALLY STABLE, LOW-LEAKAGE SELF-ALIGNED TITANIUM SILICIDE JUNCTIONS
    YOSHIDA, T
    OGAWA, S
    OKUDA, S
    KOUZAKI, T
    TSUKAMOTO, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (06) : 1914 - 1917
  • [22] CONTROL OF A SELF-ALIGNED W-SILICIDE PROCESS BY ANNEALING AMBIENCE
    TORRES, J
    PALLEAU, J
    BOURHILA, N
    OBERLIN, JC
    DENEUVILLE, A
    BENYAHIA, M
    JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 183 - 186
  • [23] Compatibility of NiSi in the self-aligned silicide process for deep submicrometer devices
    Mukai, R
    Ozawa, S
    Yagi, H
    THIN SOLID FILMS, 1995, 270 (1-2) : 567 - 572
  • [24] Process optimization of titanium self-aligned silicide formation through evaluation of sheet resistance by design of experiment methodology
    Gau, In -Chi
    Chang, Yao-Wen
    Chen, Giin-Shan
    Cheng, Yi-Lung
    Fang, Jau-Shiung
    SOLID-STATE ELECTRONICS, 2024, 215
  • [25] A SELF-ALIGNED MO-SILICIDE FORMATION
    NAGASAWA, E
    OKABAYASHI, H
    MORIMOTO, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (01): : L57 - L59
  • [26] Investigation of a Self-Aligned Cobalt Silicide Process for Ohmic Contacts to Silicon Carbide
    Ekstrom, Mattias
    Ferrario, Andrea
    Zetterling, Carl-Mikael
    JOURNAL OF ELECTRONIC MATERIALS, 2019, 48 (04) : 2509 - 2516
  • [27] Investigation of a Self-Aligned Cobalt Silicide Process for Ohmic Contacts to Silicon Carbide
    Mattias Ekström
    Andrea Ferrario
    Carl-Mikael Zetterling
    Journal of Electronic Materials, 2019, 48 : 2509 - 2516
  • [28] A self-aligned silicide process technology for sub-0.25 μm geometries
    White, TR
    Kolar, D
    Jahanbani, M
    Frisa, L
    Nagabushnam, R
    Chuang, H
    Tsui, P
    Cope, J
    Pulvirent, L
    Bolton, S
    MICROELECTRONIC DEVICE TECHNOLOGY II, 1998, 3506 : 112 - 119
  • [29] 'Characterization of a self-aligned two step RTP titanium disilicide MOS-process; etch selectivity and silicide formation'
    Kaplan, W.
    Lindberg, A.
    Zhang, S.-L.
    Ostling, M.
    Norstroem, H.
    Proceedings of the Nordic Semiconductor Meeting, 1990,
  • [30] Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (NS) implantation process
    Jia, YM
    Lim, CW
    Bourdillon, AJ
    Boothroyd, C
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1999, 18 (05) : 385 - 388
12345