DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS

被引：61

作者：

ALPERIN, ME

HOLLAWAY, TC

HAKEN, RA

GOSMEYER, CD

KARNAUGH, RV

PARMANTIE, WD

机构：

[1] TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,BIPOLAR WATER FABRICAT GRP,DALLAS,TX 75265

[2] TEXAS INSTRUMENTS INC,VLSI LAB,DALLAS,TX 75265

[3] TEXAS INSTRUMENTS INC,SEMICOND PROC GRP,DALLAS,TX 75265

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1985年 / 20卷 / 01期

关键词：

D O I：

10.1109/JSSC.1985.1052277

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：61 / 69

页数：9

共 19 条

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MCQUILLAN A, 1956, TITANIUM, P415

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MERCHANT P, 1984, MAY WORKSH REFR MET, V2

[8]

MOHSEN A, 1984, MAY WORKSH REFR MET, V2

[9] SILICIDE FORMATION IN THIN COSPUTTERED (TANTALUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J].

MURARKA, SP ;

FRASER, DB .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) :1593-1598

[10] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J].

MURARKA, SP .

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