ROOM-TEMPERATURE EXCITONS IN 1.6-MU-M BAND-GAP GALNAS/ALLNAS QUANTUM WELLS

被引：144
作者：
WEINER, JS
CHEMLA, DS
MILLER, DAB
WOOD, TH
SIVCO, D
CHO, AY
机构：
[1] AT&T BELL LABS,CRAWFORD HILL,NJ 07733
[2] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 07期
关键词：
D O I：
10.1063/1.95504
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：619 / 621
页数：3
相关论文
共 28 条
[1]   INTERBAND MAGNETOABSORPTION OF IN0.53GA0.47AS [J].
ALAVI, K ;
AGGARWAL, RL ;
GROVES, SH .
PHYSICAL REVIEW B, 1980, 21 (03) :1311-1315
[2]   EXCITON BINDING-ENERGY IN QUANTUM WELLS [J].
BASTARD, G ;
MENDEZ, EE ;
CHANG, LL ;
ESAKI, L .
PHYSICAL REVIEW B, 1982, 26 (04) :1974-1979
[3]   ROOM-TEMPERATURE EXCITONIC NONLINEAR ABSORPTION AND REFRACTION IN GAAS/ALGAAS MULTIPLE QUANTUM WELL STRUCTURES [J].
CHEMLA, DS ;
MILLER, DAB ;
SMITH, PW ;
GOSSARD, AC ;
WIEGMANN, W .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (03) :265-275
[4]   ELECTRO-ABSORPTION BY STARK-EFFECT ON ROOM-TEMPERATURE EXCITONS IN GAAS/GAALAS MULTIPLE QUANTUM WELL STRUCTURES [J].
CHEMLA, DS ;
DAMEN, TC ;
MILLER, DAB ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1983, 42 (10) :864-866
[5]   NEAR-BAND-GAP ABSORPTION AND PHOTO-LUMINESCENCE OF IN0.53GA0.47AS SEMICONDUCTOR ALLOY [J].
CHEN, YS ;
KIM, OK .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7392-7396
[6]   ELECTRON MOBILITIES IN MODULATION DOPED GA0.47IN0.53AS/AL0.48IN0.52AS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY [J].
CHENG, KY ;
CHO, AY ;
DRUMMOND, TJ ;
MORKOC, H .
APPLIED PHYSICS LETTERS, 1982, 40 (02) :147-149
[7]   GROWTH OF III-V SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY AND THEIR PROPERTIES [J].
CHO, AY .
THIN SOLID FILMS, 1983, 100 (04) :291-317
[8]   QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].
DINGLE, R ;
WIEGMANN, W ;
HENRY, CH .
PHYSICAL REVIEW LETTERS, 1974, 33 (14) :827-830
[9]  
DINGLE R, 1975, ADV SOLID STATE PHYS, V15, P21
[10]   OPTICAL AND CRYSTALLOGRAPHIC PROPERTIES AND IMPURITY INCORPORATION OF GAXIN1-XAS (0.44 LESS-THAN X LESS-THAN 0.49) GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY, AND METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].
GOETZ, KH ;
BIMBERG, D ;
JURGENSEN, H ;
SELDERS, J ;
SOLOMONOV, AV ;
GLINSKII, GF ;
RAZEGHI, M .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4543-4552
123