PLASMA-ETCHING MECHANISM OF SILICON STUDIED BY MASS-SELECTED ION-BEAM IRRADIATION TECHNIQUE

被引：0

作者：

TACHI, S

MIYAKE, K

机构：

来源：

JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS | 1984年 / 13卷

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中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：343 / 357

页数：15

共 30 条

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