GEXSI1-X STRAINED-LAYER HETEROSTRUCTURE BIPOLAR-TRANSISTORS

被引：75

作者：

TEMKIN, H

BEAN, JC

ANTREASYAN, A

LEIBENGUTH, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 13期

关键词：

D O I：

10.1063/1.99220

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1089 / 1091

页数：3

共 10 条

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[7] BAND ALIGNMENTS OF COHERENTLY STRAINED GEXSI1-X/SI HETEROSTRUCTURES ON LESS-THAN-001-GREATER-THAN GEYSI1-Y SUBSTRATES [J].

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[8] GEXSI1-X STRAINED-LAYER SUPERLATTICE WAVE-GUIDE PHOTODETECTORS OPERATING NEAR 1.3 MU-M [J].

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[9] GE0.6SI0.4 RIB WAVE-GUIDE AVALANCHE PHOTODETECTORS FOR 1.3-MU-M OPERATION [J].

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BEAN, JC .

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[10]

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