GEXSI1-X STRAINED-LAYER HETEROSTRUCTURE BIPOLAR-TRANSISTORS

被引：74
|
作者：
TEMKIN, H
BEAN, JC
ANTREASYAN, A
LEIBENGUTH, R
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 13期
关键词：
D O I：
10.1063/1.99220
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1089 / 1091
页数：3
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