GEXSI1-X STRAINED-LAYER HETEROSTRUCTURE BIPOLAR-TRANSISTORS

被引:74
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TEMKIN, H
BEAN, JC
ANTREASYAN, A
LEIBENGUTH, R
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10.1063/1.99220
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O59 [应用物理学];
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页码:1089 / 1091
页数:3
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