DISTRIBUTION COEFFICIENTS OF GA, AS, AND P DURING GROWTH OF INGAASP LAYERS BY LIQUID-PHASE EPITAXY

被引：28

作者：

ANTYPAS, GA ^{[1
]}

EDGECUMBE, J ^{[1
]}

机构：

[1] VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303

来源：

JOURNAL OF CRYSTAL GROWTH | 1976年 / 34卷 / 01期

关键词：

D O I：

10.1016/0022-0248(76)90271-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：132 / 138

页数：7

共 17 条

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[3] GROWTH AND CHARACTERIZATION OF GAASSB-GAALASSB LATTICE-MATCHED HETEROJUNCTIONS [J].

ANTYPAS, GA ;

MOON, RL .

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[4] LIQUID EPITAXIAL GROWTH OF GAASSB AND ITS USE AS A HIGH-EFFICIENCY, LONG-WAVELENGTH THRESHOLD PHOTOEMITTER [J].

ANTYPAS, GA ;

JAMES, LW .

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[5] GROWTH AND CHARACTERIZATION OF LIQUID-PHASE EPITAXIAL INAS1-XPX [J].

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YEP, TO .

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[6]

ANTYPAS GA, 1973, GALLIUM ARSENIDE REL, P48

[7] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J].

ARTHUR, JR .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) :2257-&

[8]

BURNHAM RD, 1972, SOV PHYS SEMICOND+, V6, P77

[9]

BURNHAM RD, 1970, APPL PHYSICS LETTERS, V17, P445

[10] THERMODYNAMICS OF III-V SOLUTIONS WITH COMPONENTS [J].

HUBER, D .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (11) :1859-1865

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