THE OXIDATION OF SHAPED SILICON SURFACES

被引：211

作者：

MARCUS, RB

SHENG, TT

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 06期

关键词：

D O I：

10.1149/1.2124118

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1278 / 1282

页数：5

共 13 条

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[8]

HU SM, 1979, J APPL PHYS, V50, P4661, DOI 10.1063/1.326575

[9] THERMAL OXIDATION OF POLYCRYSTALLINE SILICON FILMS [J].

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[10] POLYSILICON SIO2 INTERFACE MICROTEXTURE AND DIELECTRIC-BREAKDOWN [J].

MARCUS, RB ;

SHENG, TT ;

LIN, P .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) :1282-1289

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