THE RELATIONSHIP BETWEEN CO-60 AND 10-KEV X-RAY-DAMAGE IN MOS DEVICES

[1] ELECTRON-HOLE PAIR CREATION ENERGY IN SIO2 [J]. APPLIED PHYSICS LETTERS, 1975, 26 (04) : 173 - 175

[2] CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1520 - 1525

[3] HOLE TRANSPORT AND TRAPPING IN FIELD OXIDES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) : 3940 - 3945

[4] BRIGGS F, 1971, SCRR710507 SAND LAB

[5] PHOTOELECTRON EFFECTS ON THE DOSE DEPOSITED IN MOS DEVICES BY LOW-ENERGY X-RAY SOURCES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) : 1465 - 1468

[6] BROWN DB, 1985, IEEE T NUCL SCI, V32, P3900

[7] BROWN DB, 1986, UNPUB IEEE T NUC DEC

[8] BROWN DD, COMMUNICATION

[9] DEFECT PRODUCTION IN SIO2 BY X-RAY AND CO-60 RADIATIONS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) : 4363 - 4368

[10] THE USE OF LOW-ENERGY X-RAYS FOR DEVICE TESTING - A COMPARISON WITH CO-60 RADIATION [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4382 - 4387

[1] ELECTRON-HOLE PAIR CREATION ENERGY IN SIO2 [J]. APPLIED PHYSICS LETTERS, 1975, 26 (04) : 173 - 175

[2] CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1520 - 1525

[3] HOLE TRANSPORT AND TRAPPING IN FIELD OXIDES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) : 3940 - 3945

[4] BRIGGS F, 1971, SCRR710507 SAND LAB

[5] PHOTOELECTRON EFFECTS ON THE DOSE DEPOSITED IN MOS DEVICES BY LOW-ENERGY X-RAY SOURCES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) : 1465 - 1468

[6] BROWN DB, 1985, IEEE T NUCL SCI, V32, P3900

[7] BROWN DB, 1986, UNPUB IEEE T NUC DEC

[8] BROWN DD, COMMUNICATION

[9] DEFECT PRODUCTION IN SIO2 BY X-RAY AND CO-60 RADIATIONS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) : 4363 - 4368

[10] THE USE OF LOW-ENERGY X-RAYS FOR DEVICE TESTING - A COMPARISON WITH CO-60 RADIATION [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4382 - 4387