THE RELATIONSHIP BETWEEN CO-60 AND 10-KEV X-RAY-DAMAGE IN MOS DEVICES

被引：172
作者：
BENEDETTO, JM
BOESCH, HE
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 06期
关键词：
D O I：
10.1109/TNS.1986.4334599
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1318 / 1323
页数：6
相关论文
共 16 条
[1]   ELECTRON-HOLE PAIR CREATION ENERGY IN SIO2 [J].
AUSMAN, GA ;
MCLEAN, FB .
APPLIED PHYSICS LETTERS, 1975, 26 (04) :173-175
[2]   CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K [J].
BOESCH, HE ;
MCGARRITY, JM .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1520-1525
[3]   HOLE TRANSPORT AND TRAPPING IN FIELD OXIDES [J].
BOESCH, HE ;
MCLEAN, FB .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :3940-3945
[4]  
BRIGGS F, 1971, SCRR710507 SAND LAB
[5]   PHOTOELECTRON EFFECTS ON THE DOSE DEPOSITED IN MOS DEVICES BY LOW-ENERGY X-RAY SOURCES [J].
BROWN, DB .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) :1465-1468
[6]  
BROWN DB, 1985, IEEE T NUCL SCI, V32, P3900
[7]  
BROWN DB, 1986, UNPUB IEEE T NUC DEC
[8]  
BROWN DD, COMMUNICATION
[9]   DEFECT PRODUCTION IN SIO2 BY X-RAY AND CO-60 RADIATIONS [J].
DOZIER, CM ;
BROWN, DB ;
THROCKMORTON, JL ;
MA, DI .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4363-4368
[10]   THE USE OF LOW-ENERGY X-RAYS FOR DEVICE TESTING - A COMPARISON WITH CO-60 RADIATION [J].
DOZIER, CM ;
BROWN, DB .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4382-4387
12