INTERDEPENDENCE OF STRAIN, PRECIPITATION, AND DISLOCATION FORMATION IN EPITAXIAL SE-DOPED GAAS

被引：35

作者：

ABRAHAMS, MS ^{[1
]}

BLANC, J ^{[1
]}

BUIOCCHI, CJ ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 08期

关键词：

D O I：

10.1063/1.1663773

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3277 / 3287

页数：11

共 20 条

[1] IMPROVEMENTS TO ALBA MACHINE FOR THINNING SPECIMENS FOR ELECTRON MICROSCOPY
ABRAHAMS, MS
BUIOCCHI, CJ
COUTTS, MD
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1968, 39 (12) : 1944 - &
[2] DETECTION OF SELENIUM CLUSTERING IN GAAS BY TRANSMISSION ELECTRON MICROSCOPY
ABRAHAMS, MS
BUIOCCHI, CJ
TIETJEN, JJ
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 760 - &
[3] LIKE-SIGN ASYMMETRIC DISLOCATIONS IN ZINC-BLENDE STRUCTURE
ABRAHAMS, MS
BLANC, J
BUIOCCHI, CJ
[J]. APPLIED PHYSICS LETTERS, 1972, 21 (05) : 185 - &
[4] ON DIFFRACTION CONTRAST FROM INCLUSIONS
ASHBY, MF
BROWN, LM
[J]. PHILOSOPHICAL MAGAZINE, 1963, 8 (94): : 1649 - &
[5] ELECTRICAL MEASUREMENTS + X-RAY LATTICE PARAMETER MEASUREMENTS OF GAAS DOPED WITH SE TE ZN + CD + STRESS EFFECTS OF THESE ELEMENTS AS DIFFUSANTS IN GAAS
BLACK, J
LUBLIN, P
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (08) : 2462 - &
[6] INTRINSIC-EXTRINSIC STACKING-FAULT PAIRS IN EPITAXIALLY GROWN SILICON LAYERS
BOOKER, GR
HOWIE, A
[J]. APPLIED PHYSICS LETTERS, 1963, 3 (09) : 156 - 157
[7] ANALYSIS OF N-TYPE GAAS WITH ELECTRON-BEAM-EXCITED RADIATIVE RECOMBINATION
CASEY, HC
KAISER, RH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) : 149 - +
[8] RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS
CUSANO, DA
[J]. SOLID STATE COMMUNICATIONS, 1964, 2 (11) : 353 - 358
[9] ON DETERMINATION OF NATURE OF DISLOCATION LOOPS
EDMONDSON, B
WILLIAMSON, GK
[J]. PHILOSOPHICAL MAGAZINE, 1964, 9 (98): : 277 - &
[10] ELECTRON MICROSCOPIC IMAGES OF SINGLE AND INTERSECTING STACKING FAULTS IN THICK FOILS .1. SINGLE FAULTS
GEVERS, R
ART, A
AMELINCKX, S
[J]. PHYSICA STATUS SOLIDI, 1963, 3 (09): : 1563 - 1593

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