GROWTH AND PROPERTIES OF HETEROEPITAXIAL GALNAS ALLOYS ON GAAS SUBSTRATES USING TRIMETHYLGALLIUM, TRIETHYLINDIUM, AND ARSINE

被引：44

作者：

BALIGA, BJ ^{[1
]}

GHANDHI, SK ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 05期

关键词：

D O I：

10.1149/1.2134292

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：683 / 687

页数：5

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