DEPOSITION OF CRYSTALLINE BINARY NITRIDE FILMS OF TIN, COPPER, AND NICKEL BY REACTIVE SPUTTERING

Crystalline binary nitride films of tin, copper, and nickel were prepared by reactive sputtering in a nitrogen plasma generated in a dc glow discharge. The chemical composition and thermal behavior of the films were established. The films were characterized by additional physicochemical techniques. Tin nitride, Sn3N4 has an electrical resistivity of 0.02 OMEGA cm and decomposes into the elements at a maximum rate at 615-degrees-C. The thermal decomposition of Cu3N takes place at 465-degrees-C, while Ni3N decomposes at 405-degrees-C in a stepwise fashion through an intermediate stage at 305-degrees-C. Tin, copper, and nickel nitride decompose into the elements. Nickel nitride crystallized in a new cubic phase with a lattice parameter of 0.446 nm.