SILICON-NITRIDE FILMS DEPOSITED BY HG-PHOTOSENSITIZATION CHEMICAL VAPOR-DEPOSITION

被引：7

作者：

LEMITI, M ^{[1
]}

AUDISIO, S ^{[1
]}

DUPUY, JC ^{[1
]}

BALLAND, B ^{[1
]}

机构：

[1] INST NATL SCI APPL, PHYSICOCHIM IND LAB, F-69621 VILLEURBANNE, FRANCE

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1992年 / 144卷 / 2-3期

关键词：

D O I：

10.1016/S0022-3093(05)80409-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Silicon nitride films have been deposited by the process of mercury-sensitized photochemical vapor deposition (photo-CVD), using a gaseous mixture of SiH4 and NH3 under 253.7 nm ultraviolet light irradiation. The main advantages of this technique are the low deposition temperature (100-400-degrees-C) and no radiation damage. Deposition rate of 8 nm/min and refractive index of about 2 were achieved. Infrared spectrum, SIMS spectrum and electrical properties of the films, including dielectric constant, flat-band voltage, breakdown field and mobile ion density were investigated.

引用

页码：261 / 268

页数：8

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