SILICON-NITRIDE FILMS DEPOSITED BY HG-PHOTOSENSITIZATION CHEMICAL VAPOR-DEPOSITION

被引：7
|
作者：
LEMITI, M [1 ]
AUDISIO, S [1 ]
DUPUY, JC [1 ]
BALLAND, B [1 ]
机构：
[1] INST NATL SCI APPL, PHYSICOCHIM IND LAB, F-69621 VILLEURBANNE, FRANCE
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1992年 / 144卷 / 2-3期
关键词：
D O I：
10.1016/S0022-3093(05)80409-0
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Silicon nitride films have been deposited by the process of mercury-sensitized photochemical vapor deposition (photo-CVD), using a gaseous mixture of SiH4 and NH3 under 253.7 nm ultraviolet light irradiation. The main advantages of this technique are the low deposition temperature (100-400-degrees-C) and no radiation damage. Deposition rate of 8 nm/min and refractive index of about 2 were achieved. Infrared spectrum, SIMS spectrum and electrical properties of the films, including dielectric constant, flat-band voltage, breakdown field and mobile ion density were investigated.
引用
收藏
页码：261 / 268
页数：8
相关论文
共 50 条
  • [31] SILICON-NITRIDE COATING OF CEMENTED CARBIDE CUTTING TOOLS BY CHEMICAL VAPOR-DEPOSITION
    ELKADDAH, N
    CHEN, CH
    JOURNAL OF METALS, 1988, 40 (11): : 74 - 74
  • [32] PHOTO-CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE FILM BY DIRECT PHOTOLYSIS
    NUMASAWA, Y
    YAMAZAKI, K
    HAMANO, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (12): : L792 - L794
  • [33] SILICON-NITRIDE CHEMICAL VAPOR-DEPOSITION IN A HOT-WALL DIFFUSION SYSTEM
    GINSBURGH, R
    HEALD, DL
    NEVILLE, RC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) : 1557 - 1559
  • [34] HEATING EFFECT IN PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE
    HAN, IK
    LEE, YJ
    JO, JH
    LEE, JI
    KANG, KN
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1991, 10 (09) : 526 - 528
  • [35] THE LOW-TEMPERATURE CATALYZED CHEMICAL VAPOR-DEPOSITION AND CHARACTERIZATION OF SILICON-NITRIDE THIN-FILMS
    DUPUIE, JL
    GULARI, E
    TERRY, F
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (04) : 1151 - 1159
  • [36] SILICON OXYNITRIDE FILMS DEPOSITED BY MERCURY PHOTOSENSITIZATION CHEMICAL-VAPOR-DEPOSITION
    KUMAR, V
    CHARI, KS
    AGNIHOTRI, OP
    THIN SOLID FILMS, 1993, 232 (01) : 47 - 50
  • [37] THERMODYNAMIC CALCULATIONS ON THE CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE AND SILICON FROM SILANE AND CHLORINATED SILANES
    KRUIS, FE
    SCARLETT, B
    BAUER, RA
    SCHOONMAN, J
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1992, 75 (03) : 619 - 628
  • [38] CHEMICAL VAPOR-DEPOSITION OF SILICON-CARBIDE AND SILICON-NITRIDE - CHEMISTRYS CONTRIBUTION TO MODERN SILICON CERAMICS
    FITZER, E
    HEGEN, D
    ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 1979, 18 (04) : 295 - 304
  • [39] CHEMICAL VAPOR-DEPOSITED AMORPHOUS SILICON-NITRIDE
    HIRAI, T
    NIIHARA, K
    HAYASHI, S
    GOTO, T
    SCIENCE REPORTS OF THE RESEARCH INSTITUTES TOHOKU UNIVERSITY SERIES A-PHYSICS CHEMISTRY AND METALLURGY, 1977, 26 (4-5): : 185 - 201
  • [40] CHARACTERISTICS OF SILICON-NITRIDE DEPOSITED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION USING A DUAL FREQUENCY RADIOFREQUENCY SOURCE
    PEARCE, CW
    FETCHO, RF
    GROSS, MD
    KOEFER, RF
    PUDLINER, RA
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (04) : 1838 - 1841
12345