SILICON-NITRIDE FILMS DEPOSITED BY HG-PHOTOSENSITIZATION CHEMICAL VAPOR-DEPOSITION

被引：7
|
作者：
LEMITI, M [1 ]
AUDISIO, S [1 ]
DUPUY, JC [1 ]
BALLAND, B [1 ]
机构：
[1] INST NATL SCI APPL, PHYSICOCHIM IND LAB, F-69621 VILLEURBANNE, FRANCE
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1992年 / 144卷 / 2-3期
关键词：
D O I：
10.1016/S0022-3093(05)80409-0
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Silicon nitride films have been deposited by the process of mercury-sensitized photochemical vapor deposition (photo-CVD), using a gaseous mixture of SiH4 and NH3 under 253.7 nm ultraviolet light irradiation. The main advantages of this technique are the low deposition temperature (100-400-degrees-C) and no radiation damage. Deposition rate of 8 nm/min and refractive index of about 2 were achieved. Infrared spectrum, SIMS spectrum and electrical properties of the films, including dielectric constant, flat-band voltage, breakdown field and mobile ion density were investigated.
引用
收藏
页码：261 / 268
页数：8
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