SILICON-NITRIDE FILMS DEPOSITED BY HG-PHOTOSENSITIZATION CHEMICAL VAPOR-DEPOSITION

被引：7
|
作者：
LEMITI, M [1 ]
AUDISIO, S [1 ]
DUPUY, JC [1 ]
BALLAND, B [1 ]
机构：
[1] INST NATL SCI APPL, PHYSICOCHIM IND LAB, F-69621 VILLEURBANNE, FRANCE
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1992年 / 144卷 / 2-3期
关键词：
D O I：
10.1016/S0022-3093(05)80409-0
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Silicon nitride films have been deposited by the process of mercury-sensitized photochemical vapor deposition (photo-CVD), using a gaseous mixture of SiH4 and NH3 under 253.7 nm ultraviolet light irradiation. The main advantages of this technique are the low deposition temperature (100-400-degrees-C) and no radiation damage. Deposition rate of 8 nm/min and refractive index of about 2 were achieved. Infrared spectrum, SIMS spectrum and electrical properties of the films, including dielectric constant, flat-band voltage, breakdown field and mobile ion density were investigated.
引用
收藏
页码：261 / 268
页数：8
相关论文
共 50 条
  • [11] SILICON-NITRIDE PRODUCED BY CATALYTIC CHEMICAL VAPOR-DEPOSITION METHOD
    MATSUMURA, H
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (08) : 3612 - 3617
  • [12] PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE
    KOBAYASHI, I
    OGAWA, T
    HOTTA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (2A): : 336 - 342
  • [13] CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE USING AN ORGANOSILAZANE PRECURSOR
    GONSALVES, KE
    GALLOIS, B
    DU, H
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1989, 198 : 143 - INOR
  • [14] AMORPHOUS HYDROGENATED SILICON-NITRIDE DEPOSITED BY MERCURY PHOTOSENSITIZATION CHEMICAL-VAPOR-DEPOSITION FOR OPTOELECTRONIC APPLICATIONS
    PASTORINO, P
    MORELLO, G
    TAMAGNO, S
    JOURNAL DE PHYSIQUE IV, 1995, 5 (C5): : 1149 - 1155
  • [15] THE EFFECTS OF DEPOSITION VARIABLES ON DEPOSITION RATE IN THE CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE
    YI, KS
    KIM, JB
    KIM, KJ
    CHUN, JS
    THIN SOLID FILMS, 1987, 155 (01) : 87 - 95
  • [16] GROWTH AND CHARACTERIZATION OF SILICON-NITRIDE FILMS BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION
    HAN, IK
    LEE, YJ
    JO, JW
    LEE, JI
    KANG, KN
    APPLIED SURFACE SCIENCE, 1991, 48-9 : 104 - 110
  • [17] DEPOSITION OF SILICON DIOXIDE AND SILICON-NITRIDE BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION
    LUCOVSKY, G
    RICHARD, PD
    TSU, DV
    LIN, SY
    MARKUNAS, RJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 681 - 688
  • [18] THE PREPARATION, PROPERTIES AND APPLICATIONS OF SILICON-NITRIDE THIN-FILMS DEPOSITED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION
    GUPTA, M
    RATHI, VK
    THANGARAJ, R
    AGNIHOTRI, OP
    CHARI, KS
    THIN SOLID FILMS, 1991, 204 (01) : 77 - 106
  • [19] STABILITY OF HYDROGEN IN SILICON-NITRIDE FILMS DEPOSITED BY LOW-PRESSURE AND PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION TECHNIQUES
    XIE, JZ
    MURARKA, SP
    GUO, XS
    LANFORD, WA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02): : 150 - 152
  • [20] PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF FLUORINATED SILICON-NITRIDE
    FUJITA, S
    TOYOSHIMA, H
    OHISHI, T
    SASAKI, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (03): : L144 - L146
12345