EXPERIMENTAL TRANSIENT ANALYSIS OF THE TUNNEL CURRENT IN EEPROM CELLS

被引：38

作者：

BEZ, R ^{[1
]}

CANTARELLI, D ^{[1
]}

CAPPELLETTI, P ^{[1
]}

机构：

[1] SGS THOMSON MICROELECTR,VLSI PROC DEV GRP,MILAN,ITALY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 04期

关键词：

D O I：

10.1109/16.52445

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The transient behaviors of the tunnel current in EEPROM cells has been analyzed using an experimental method. In particular, since the cell is written with a ramp waveform pulse in order to minimize the maximum tunnel current in actual device operation, the measurements have been performed with ramp waveform writing pulses at different ramp speeds. The kind of information that can be obtained from such transient analysis greatly improves the understanding of the device physics. In fact, by measuring tunnel current, some expected results have been found, such as the dependence of the maximum current value on the ramp speed, but also some unexpected ones, such as an anomalous peak during erasing operation or the influence of the ramp speed on the conduction properties of the thin oxide, which is shown by the Fowler-Nordheim plot of the experimental tunnel current. © 1990 IEEE

引用

页码：1081 / 1086

页数：6

共 13 条

[1] SPICE MODEL FOR TRANSIENT ANALYSIS OF EEPROM CELLS [J].