A 100-MESFET PLANAR GRID OSCILLATOR

被引:83
作者
POPOVIC, ZB [1 ]
WEIKLE, RM [1 ]
KIM, M [1 ]
RUTLEDGE, DB [1 ]
机构
[1] CALTECH,DIV ENGN & APPL SCI,PASADENA,CA 91125
关键词
D O I
10.1109/22.102960
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work we present a 100-MESFET oscillator which gives 21 W of CW effective radiated power (ERP) with a 16 dB directivity and a 20% dc to RF conversion efficiency at 5 GHz. The oscillator is a planar grid structure periodically loaded with transistors. The grid radiates and the devices combine quasi-optically and lock to each other. The oscillator can also be quasi-optically injection-locked to an external signal. The planar grid structure is very simple. All of the devices share the same bias, and they can be power and frequency tuned with a mirror behind the grid or dielectric slabs in front of it. An equivalent circuit for an infinite grid predicts the mirror frequency tuning. The planar property of the oscillator offers the possibility of a wafer-scale monolithically integrated source. Thousands of active solid-state devices can potentially be integrated in a high-power source for microwave or millimeter-wave applications.
引用
收藏
页码:193 / 200
页数:8
相关论文
共 12 条
[1]   HETEROJUNCTION BIPOLAR-TRANSISTORS FOR MICROWAVE AND MILLIMETER-WAVE INTEGRATED-CIRCUITS [J].
ASBECK, PM ;
CHANG, MF ;
WANG, KC ;
MILLER, DL ;
SULLIVAN, GJ ;
SHENG, NH ;
SOVERO, E ;
HIGGINS, JA .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1987, 35 (12) :1462-1470
[2]   OSCILLATIONS UP TO 420 GHZ IN GAAS/ALAS RESONANT TUNNELING DIODES [J].
BROWN, ER ;
SOLLNER, TCLG ;
PARKER, CD ;
GOODHUE, WD ;
CHEN, CL .
APPLIED PHYSICS LETTERS, 1989, 55 (17) :1777-1779
[3]   THEORETICAL AND EXPERIMENTAL ANALYSIS OF A WAVEGUIDE MOUNTING STRUCTURE [J].
EISENHAR.RL ;
KHAN, PJ .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1971, MT19 (08) :706-&
[4]  
Harrington R. F., 1961, TIME HARMONIC ELECTR, P349
[5]   VERY HIGH POWER-ADDED EFFICIENCY AND LOW-NOISE 0.15-MICRO-M GATE-LENGTH PSEUDOMORPHIC HEMTS [J].
KAO, MY ;
SMITH, PM ;
HO, P ;
CHAO, PC ;
DUH, KHG ;
JABRA, AA ;
BALLINGALL, JM .
IEEE ELECTRON DEVICE LETTERS, 1989, 10 (12) :580-582
[6]   INJECTION LOCKING OF MICROWAVE SOLID-STATE OSCILLATORS [J].
KUROKAWA, K .
PROCEEDINGS OF THE IEEE, 1973, 61 (10) :1386-1410
[8]   BAR-GRID OSCILLATORS [J].
POPOVIC, ZB ;
WEJKLE, RM ;
KIM, M ;
POTTER, KA ;
RUTLEDGE, DB .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1990, 38 (03) :225-230
[9]   GRID OSCILLATORS [J].
POPOVIC, ZB ;
KIM, M ;
RUTLEDGE, DB .
INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1988, 9 (07) :647-654
[10]  
RUTLEDGE DB, 1983, INFRARED MILLIMETER, V10, P1