THE DEPENDENCE OF THRESHOLD VOLTAGE SCATTERING OF GAAS-MESFET ON ANNEALING METHOD

被引：23

作者：

EGAWA, T

SANO, Y

NAKAMURA, H

ISHIDA, T

KAMINISHI, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1985年 / 24卷 / 01期

关键词：

D O I：

10.1143/JJAP.24.L35

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L35 / L38

页数：4

共 7 条

[1]

IDDA M, 1984, 16TH INT C SOL STAT, P30

[2] SIOXNY CAPPED ANNEALING FOR SI-IMPLANTED GAAS [J].

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APPLIED PHYSICS LETTERS, 1984, 44 (05) :527-529

[3] DISLOCATIONS AS THE ORIGIN OF THRESHOLD VOLTAGE SCATTERINGS FOR GAAS-MESFET ON LEC-GROWN SEMI-INSULATING GAAS SUBSTRATE [J].

MIYAZAWA, S ;

ISHII, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1057-1062

[4]

NAKAMURA H, 1983, ISSCC DIG TECH PAP I, V26, P134

[5] A SIMPLIFIED CAPLESS ANNEALING GAAS FOR MESFET APPLICATIONS [J].

PANDE, KP ;

AINA, OA ;

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NAIR, VKR ;

OCONNOR, JM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (04) :506-508

[6] ORIENTATION EFFECT REDUCTION THROUGH CAPLESS ANNEALING OF SELF-ALIGNED PLANAR GAAS SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J].

SADLER, RA ;

EASTMAN, LF .

APPLIED PHYSICS LETTERS, 1983, 43 (09) :865-867

[7] IMPROVED THRESHOLD VOLTAGE UNIFORMITY IN GAAS-MESFET USING HIGH-PURITY MOCVD-GROWN BUFFER LAYER AS A SUBSTRATE FOR ION-IMPLANTATION [J].

SANO, Y ;

NAKAMURA, H ;

AKIYAMA, M ;

EGAWA, T ;

ISHIDA, T ;

KAMINISHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (05) :L290-L292

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