NATIVE DEFECT COMPENSATION IN HGI2 CRYSTALS

被引：39
|
作者：
WHITED, RC [1 ]
VANDENBERG, L [1 ]
机构：
[1] EG&G,SANTA BARBARA OPERAT,GOLETA,CA 93017
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1977年 / 24卷 / 01期
关键词：
D O I：
10.1109/TNS.1977.4328662
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：165 / 167
页数：3
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