EFFECT OF FINITE RECOVERY TIME ON CHARGE-STORAGE DIODE FREQUENCY MULTIPLIERS

被引：1

作者：

ROULSTON, DJ

机构：

来源：

ELECTRONICS LETTERS | 1967年 / 3卷 / 05期

关键词：

D O I：

10.1049/el:19670149

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：190 / &

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[2] GENERATION OF HARMONICS AND SUBHARMONICS AT MICROWAVE FREQUENCIES WITH P-N JUNCTION DIODES
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UHLIR, A
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[3] Moll J. L., 1962, P IRE, V50, P43
[4] FREQUENCY MULTIPLICATION USING CHARGE STORAGE EFFECT - AN ANALYSIS FOR HIGH EFFICIENCY HIGH POWER OPERATION
ROULSTON, DJ
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1965, 18 (01) : 73 - &