INTERFACIAL RECOMBINATION AT (ALGA)AS-GAAS HETEROJUNCTION STRUCTURES

被引：98

作者：

ETTENBERG, M ^{[1
]}

KRESSEL, H ^{[1
]}

机构：

[1] RCA LABS DAVID SARNOFF RES CTR,PRINCETON,NJ 08540

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 04期

关键词：

D O I：

10.1063/1.322821

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1538 / 1544

页数：7

共 15 条

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[7] GALLIUM-ARSENIDE AND (ALGA) AS DEVICES PREPARED BY LIQUID-PHASE EPITAXY (REVIEW ARTICLE) [J].

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