MOBILITY OF EDGE DISLOCATIONS IN SILICON-IRON CRYSTALS AT 20 DEGREES K

被引：22

作者：

STEIN, DF

LAFORCE, RP

机构：

来源：

关键词：

D O I：

10.1063/1.1714057

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：661 / &

共 7 条

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[5]

LOW JR, 1957, ACTA MET, V5, P405

[6]

SHOECK G, 1961, ACTA MET, V9, P382

[7] MOBILITY OF EDGE DISLOCATIONS IN SILICON-IRON CRYSTALS [J].

STEIN, DF ;

LOW, JR .