TOTAL DOSE EFFECTS IN RECESSED OXIDE DIGITAL BIPOLAR MICROCIRCUITS

被引：36

作者：

PEASE, RL ^{[1
]}

TURFLER, RM ^{[1
]}

PLATTETER, D ^{[1
]}

EMILY, D ^{[1
]}

BLICE, R ^{[1
]}

机构：

[1] NAVAL WEAP SUPPORT CTR,CRANE,IN 47522

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 06期

关键词：

D O I：

10.1109/TNS.1983.4333111

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4216 / 4223

页数：8

共 15 条

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[8] HARDNESS ASSURANCE CONSIDERATIONS FOR LONG-TERM IONIZING-RADIATION EFFECTS ON BIPOLAR STRUCTURES [J].

HART, AR ;

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SNOWDEN, DP ;

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) :1502-1507

[9] THE BASE CURRENT RECOMBINING AT THE OXIDIZED SILICON SURFACE [J].

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[10]

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