IDENTIFICATION OF RESIDUAL DONOR IMPURITIES IN GALLIUM-ARSENIDE

被引：0

作者：

LOW, TS

STILLMAN, GE

WOLFE, CM

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[3] WASHINGTON UNIV,SEMICOND RES LAB,ST LOUIS,MO 63130

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1982年 / 63期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：143 / 148

页数：6

共 19 条

[1]

ABROKWAH J, 1980, COMMUNICATION

[2]

ABROKWAH J, 1981, COMMUNICATION

[3]

ASFAR MN, 1980, I PHYS C SER, V56, P547

[4] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J].

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1981, 38 (09) :701-703

[5]

COLLINS DR, 1981, COMMUNICATION

[6] CHARACTERIZATION OF DONORS IN GAAS EPITAXIAL-FILMS BY FAR-INFRARED PHOTOCONDUCTIVE TECHNIQUES [J].

COOKE, RA ;

HOULT, RA ;

KIRKMAN, RF ;

STRADLING, RA .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (06) :945-953

[7]

DAPKUS PD, UNPUB J CRYST GROWTH

[8]

Dazai K., 1974, Fujitsu Scientific and Technical Journal, V10, P125

[9]

KENNEDY JE, 1979, COMMUNICATION

[10] HIGH-PURITY GAAS AND CR-DOPED GAAS EPITAXIAL LAYERS BY MBE [J].

MORKOC, H ;

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) :6413-6416

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