MINORITY-CARRIER LIFETIME IN INAS EPILAYERS

被引：19

作者：

WIEDER, HH ^{[1
]}

COLLINS, DA ^{[1
]}

机构：

[1] USN,ELECTR LAB CTR,SAN DIEGO,CA 92152

来源：

关键词：

D O I：

10.1063/1.1655384

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：742 / 743

页数：2

共 9 条

[1]

BARYSHEV NS, 1965, FIZ TVERD TELA+, V6, P2410

[2] AUGER EFFECT IN SEMICONDUCTORS [J].

BEATTIE, AR ;

LANDSBERG, PT .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256) :16-29

[3] CARRIER LIFETIMES IN EPITAXIAL INAS [J].

DALAL, VL ;

HICINBOTHEM, WA ;

KRESSEL, H .

[4] ANOMALOUS ELECTRICAL PROPERTIES OF PARA-TYPE INDIUM ARSENIDE [J].

DIXON, JR .

[5] CARRIER RECOMBINATION IN INDIUM ARSENIDE [J].

HOLLIS, JEL .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1967, 91 (571P) :151-&

[6] AUGER EFFECT IN SEMICONDUCTORS [J].

LANDSBERG, PT ;

BEATTIE, AR .

[7]

Schultz B. H., 1955, Philips Res. Rep, V10, P337

[8]

VANDERPAUW LJ, 1957, PHILIPS RES REP, V12, P364

[9] TRANSPORT-COEFFICIENTS OF INAS EPILAYERS [J].

WIEDER, HH .