GAAS/AIGAAS ROOFTOP REFLECTOR LASER FOR OPTOELECTRONIC INTEGRATED-CIRCUITS

被引：0

作者：

CHAE, CJ

KWON, YS

机构：

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 21期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1118 / 1120

页数：3

共 12 条

[1] STOP-CLEAVED INGAASP LASERS FOR MONOLITHIC OPTOELECTRONIC INTEGRATION [J].

ANTREASYAN, A ;

CHEN, CY ;

LOGAN, RA .

APPLIED PHYSICS LETTERS, 1985, 46 (10) :921-923

[2] ALGAAS LASERS WITH MICRO-CLEAVED MIRRORS SUITABLE FOR MONOLITHIC INTEGRATION [J].

BLAUVELT, H ;

BARCHAIM, N ;

FEKETE, D ;

MARGALIT, S ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :289-290

[3] MODES OF OPTICAL MASER CAVITIES WITH ROOF-TOP + CORNER-CUBE REFLECTORS [J].

BOBROFF, DL .

APPLIED OPTICS, 1964, 3 (12) :1485-&

[4] LOW THRESHOLD GAAS/GAALAS BH LASERS WITH ION-BEAM-ETCHED MIRRORS [J].

BOUADMA, N ;

RIOU, J ;

KAMPFER, A .

ELECTRONICS LETTERS, 1985, 21 (13) :566-568

[5]

CARTER AC, 1979, INT ELECTRON DEVICES, P118

[6] EMBEDDED-MIRROR SEMICONDUCTOR-LASER [J].

LAIDIG, WD ;

LEE, JW ;

CALDWELL, PJ .

APPLIED PHYSICS LETTERS, 1984, 45 (05) :485-487

[7] SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM [J].

LIDA, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) :768-&

[8]

LIOU JY, 1980, APPL OPTICS, V3, P650

[9] POLARIZATION PROPERTIES OF CORNER REFLECTORS AND CAVITIES [J].

PECK, ER .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (03) :253-&

[10]

THOMPSON GHB, 1980, PHYSICS SEMICONDUCTO, P98

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