MECHANISM OF RF REACTIVE SPUTTERING

[1] ABE T, COMMUNICATION

[2] PLASMA DIAGNOSTICS OF AN RF-SPUTTERING GLOW DISCHARGE [J]. APPLIED PHYSICS LETTERS, 1971, 18 (10) : 435 - &

[3] HALLANDS E, 1968, J MATER SCI, V3, P544

[4] Harvey J., 1970, Thin Solid Films, V6, P277, DOI 10.1016/0040-6090(70)90126-4

[5] HELLER J, 1973, THIN SOLID FILMS, V17, P163

[6] EFFECT OF OXYGEN ON RF-SPUTTERING RATE OF SIO2 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1968, 5 (03): : 84 - &

[7] EFFECTS OF ADDED O2 UPON ARGON EMISSION FROM AN RF GLOW DISCHARGE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (05): : 838 - +

[8] SHINOKI F, 1974, JPN J APPL PHYS PT 1, V2, P505

[9] SPECTROSCOPIC INVESTIGATION OF REACTIVE SPUTTERING OF ALUMINIUM [J]. THIN SOLID FILMS, 1971, 7 (01) : 1 - &

[10] VALETTA RM, 1966, ELECTROCHEM TECHNOL, V4, P402

[1] ABE T, COMMUNICATION

[2] PLASMA DIAGNOSTICS OF AN RF-SPUTTERING GLOW DISCHARGE [J]. APPLIED PHYSICS LETTERS, 1971, 18 (10) : 435 - &

[3] HALLANDS E, 1968, J MATER SCI, V3, P544

[4] Harvey J., 1970, Thin Solid Films, V6, P277, DOI 10.1016/0040-6090(70)90126-4

[5] HELLER J, 1973, THIN SOLID FILMS, V17, P163

[6] EFFECT OF OXYGEN ON RF-SPUTTERING RATE OF SIO2 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1968, 5 (03): : 84 - &

[7] EFFECTS OF ADDED O2 UPON ARGON EMISSION FROM AN RF GLOW DISCHARGE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (05): : 838 - +

[8] SHINOKI F, 1974, JPN J APPL PHYS PT 1, V2, P505

[9] SPECTROSCOPIC INVESTIGATION OF REACTIVE SPUTTERING OF ALUMINIUM [J]. THIN SOLID FILMS, 1971, 7 (01) : 1 - &

[10] VALETTA RM, 1966, ELECTROCHEM TECHNOL, V4, P402