EXTREMELY LOW THRESHOLD CURRENT STRAINED INGAAS/ALGAAS LASERS BY MOLECULAR-BEAM EPITAXY

被引：79

作者：

WILLIAMS, RL ^{[1
]}

DION, M ^{[1
]}

CHATENOUD, F ^{[1
]}

DZURKO, K ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 17期

关键词：

D O I：

10.1063/1.105098

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using solid source molecular beam epitaxy we have grown strained layer InGaAs/AlGaAs graded index separate confinement heterostructure lasers operating at 1.01-mu-m. For broad-area, uncoated Fabry-Perot devices with cavity lengths in excess of 3000-mu-m, the threshold current density is 56 A/cm2, a value which we believe to be the lowest ever reported for laser diodes in any materials system. The internal quantum efficiency for these lasers is 88%, while the materials losses are 1.8 cm-1.

引用

页码：1816 / 1818

页数：3

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