ELECTRICAL BAND-GAP NARROWING IN N-TYPE AND P-TYPE HEAVILY DOPED SILICON AT 300 K

被引：2

|

作者：

VANCONG, H

BRUNET, S

机构：

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 09期

关键词：

D O I：

10.1016/0038-1101(86)90003-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：857 / 860

页数：4

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