ELECTRICAL BAND-GAP NARROWING IN N-TYPE AND P-TYPE HEAVILY DOPED SILICON AT 300 K

被引：2
作者：
VANCONG, H
BRUNET, S
机构：
来源：
SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 09期
关键词：
D O I：
10.1016/0038-1101(86)90003-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：857 / 860
页数：4
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