ELECTRICAL BAND-GAP NARROWING IN N-TYPE AND P-TYPE HEAVILY DOPED SILICON AT 300 K

被引：2

作者：

VANCONG, H

BRUNET, S

机构：

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 09期

关键词：

D O I：

10.1016/0038-1101(86)90003-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：857 / 860

页数：4

共 17 条

[1] HEAVILY DOPED SEMICONDUCTORS AND DEVICES [J].

ABRAM, RA ;

REES, GJ ;

WILSON, BLH .

ADVANCES IN PHYSICS, 1978, 27 (06) :799-892

[2] EXPERIMENTAL BOUNDS ON BAND-GAP NARROWING SET BY HIGH OPEN CIRCUIT VOLTAGE SILICON SOLAR-CELLS [J].

BLAKERS, AW ;

GREEN, MA ;

KELLER, EM .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :591-599

[3] ELECTRONIC STRUCTURE OF PRIMARY SOLID SOLUTIONS IN METALS [J].

FRIEDEL, J .

ADVANCES IN PHYSICS, 1954, 3 (12) :446-507

[4]

Kittel C., 1976, INTRO SOLID STATE PH, V5, P33

[5] A MODEL FOR BAND-GAP SHRINKAGE IN SEMICONDUCTORS WITH APPLICATION TO SILICON [J].

LANDSBERG, PT ;

NEUGROSCHEL, A ;

LINDHOLM, FA ;

SAH, CT .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1985, 130 (01) :255-266

[6]

LANDSBERG PT, 1984, 17TH IEEE PHOT SPEC, P415

[7] BANDGAP NARROWING IN MODERATELY TO HEAVILY DOPED SILICON [J].

LANYON, HPD ;

TUFT, RA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) :1014-1018

[8]

MERTENS RP, 1980, IEEE T ELECTRON DEVI, V27, P983

[9] ENERGY-GAP REDUCTION IN HEAVILY DOPED SILICON - CAUSES AND CONSEQUENCES [J].

PANTELIDES, ST ;

SELLONI, A ;

CAR, R .

SOLID-STATE ELECTRONICS, 1985, 28 (1-2) :17-24

[10]

ROOS OV, 1985, J APPL PHYS, V57, P4746

← 1 2 →